Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, l

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

Features

ow forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

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Package outline

Page 2

1.0A Surface Mount Schottky Barrier

Rectifiers - 20V-40V

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Diode junction capacitance

Storage temperature

See Fig.1

8.3ms single half sine-wave (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

C

J

T

STG

A

A

mA

pF

1.0

30

0.2

+175

-65

LFM120

LFM130

LFM140

20

30

40

14

21

28

20

30

40

-55 to +125

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =1.0A

F

V

= V

T = 25 C

R

RRM

J

O

V

= V

T = 100 C

R

RRM

J

O

160

10

V

F

(V)

*4

0.45

Formosa MS

Chip Schottky Barrier Rectifier

(C)

O

Operating

temperature

T,

J

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

LFM120 THRU LFM140

Mechanical data

Epoxy:UL94-V0 rated flame retardant

Case : Molded plastic,

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight :

0.05 gram

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DO-214AC / SMA

Approximated

0.196(4.9)

0.180(4.5)

0.012(0.3) Typ.

0.106(2.7)

0.091(2.3)

0.068(1.7)

0.060(1.5)

0.032 (0.8) Typ.

0.032(0.8) Typ.

Dimensions in inches and (millimeters)

SMA

Document ID

Issued Date

Revised Date

Revision

Page.

DS-12160M

2008/02/10

2010/03/10

D

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A