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DS90C031B Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. DS90C031B
Description  LVDS Quad CMOS Differential Line Driver
Download  12 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS90C031B Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +6V
Input Voltage (D
IN)
−0.3V to (V
CC + 0.3V)
Enable Input Voltage (EN, EN*)
−0.3V to (V
CC + 0.3V)
Output Voltage (D
OUT+,DOUT−)
−0.3V to +5.8V
Short Circuit Duration
(D
OUT+,DOUT−)
Continuous
Maximum Package Power Dissipation @ +25˚C
M Package
1068 mW
WM Package
1562 mW
Derate M Package
8.5 mW/˚C above +25˚C
Derate WM Package
12.5 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)
+260˚C
Maximum Junction
Temperature
+150˚C
ESD Rating (Note 7)
(HBM, 1.5 k
Ω, 100 pF)
≥ 2kV
(EIAJ, 0
Ω, 200 pF)
≥ 250V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
+4.5
+5.0
+5.5
V
Operating Free Air Temperature (T
A)
DS90C031BT
−40
+25
+85
˚C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
V
OD1
Differential Output Voltage
R
L = 100Ω (Figure 1)DOUT−,
D
OUT+
250
345
450
mV
∆V
OD1
Change in Magnitude of
V
OD1 for Complementary
Output States
4
35
|mV|
V
OS
Offset Voltage
1.10
1.25
1.35
V
∆V
OS
Change in Magnitude of
V
OS for Complementary
Output States
5
25
|mV|
V
OH
Output Voltage High
R
L = 100Ω
1.41
1.60
V
V
OL
Output Voltage Low
0.90
1.07
V
V
IH
Input Voltage High
D
IN,
EN,
EN*
2.0
V
CC
V
V
IL
Input Voltage Low
GND
0.8
V
I
I
Input Current
V
IN =VCC, GND, 2.5V or 0.4V
−10
±1
+10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
OS
Output Short Circuit Current
V
OUT = 0V (Note 8)
D
OUT−,
D
OUT+
−3.5
−5.0
mA
I
OZ
Output TRI-STATE Current
EN = 0.8V and EN* = 2.0V,
V
OUT =0VorVCC
−10
±1
+10
µA
I
OFF
Power - Off Leakage
V
O = 0V or 2.4V, VCC = 0V or Open
−10
±1
+10
µA
I
CC
No Load Supply Current
Drivers Enabled
D
IN =VCC or GND
V
CC
1.7
3.0
mA
D
IN = 2.5V or 0.4V
4.0
6.5
mA
I
CCL
Loaded Supply Current
Drivers Enabled
R
L = 100Ω (all channels)
V
IN =VCC or GND (all inputs)
15.4
21.0
mA
I
CCZ
No Load Supply Current
Drivers Disabled
D
IN =VCC or GND
EN = GND, EN* = V
CC
2.2
4.0
mA
Switching Characteristics
V
CC = +5.0V, TA = +25˚C (Notes 3, 6, 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
PHLD
Differential Propagation Delay High to Low
R
L = 100Ω,CL =5pF
(
Figure 2 and Figure 3)
1.0
2.0
3.0
ns
t
PLHD
Differential Propagation Delay Low to High
1.0
2.1
3.0
ns
t
SKD
Differential Skew |t
PHLD –tPLHD|
0
80
400
ps
t
SK1
Channel-to-Channel Skew (Note 4)
0
300
600
ps
t
TLH
Rise Time
0.35
1.5
ns
t
THL
Fall Time
0.35
1.5
ns
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