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OPA4820IDR Datasheet(PDF) 3 Page - Texas Instruments |
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OPA4820IDR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 35 page OPA4820 SBOS317D − SEPTEMBER 2004 − REVISED AUGUST 2008 www.ti.com 3 ELECTRICAL CHARACTERISTICS: VS = ±5V Boldface limits are tested at +25 °C. At RF = 402Ω, RL = 100Ω, and GND = +2, unless otherwise noted. OPA4820ID, IPW TYP MIN/MAX OVER TEMPERATURE PARAMETER CONDITIONS +25 °C +25 °C(1) 0 °C to 70 °C(2) −40 °C to +85 °C(2) UNITS MIN/ MAX TEST LEVEL(3) AC PERFORMANCE Small-Signal Bandwidth G = +1, VO = 0.1VPP, RF = 25Ω 650 MHz typ C G = +2, VO = 0.1VPP 220 150 140 135 MHz min B G = +10, VO = 0.1VPP 27 21 19 18 MHz min B Gain-Bandwidth Product G ≥ 20 250 200 185 180 MHz min B Peaking at a Gain of 1 VO = 0.1VPP, RF = 25Ω 1 dB typ C Bandwidth for 0.1dB Gain Flatness G = +2, VO = 0.1VPP 33 MHz typ C Large-Signal Bandwidth G = +2, 2VPP 80 MHz typ C Slew Rate G = +2, 2V Step 240 190 184 178 V/ µs min B Rise Time and Fall TIme G = +2, VO = 2V Step 1.5 ns typ C Settling Time to 0.02% G = +2, VO = 2V Step 22 ns typ C Settling Time to 0.1% G = +2, VO = 2V Step 18 ns typ C Harmonic Distortion G = +2, f = 1MHz, VO = 2VPP 2nd-Harmonic RL = 200Ω −84 −80 −79 −78 dBc max B RL ≥ 500Ω −90 −85 −83 −81 dBc max B 3rd-Harmonic RL = 200Ω −92 −87 −86 −85 dBc max B RL ≥ 500Ω −105 −100 −97 −95 dBc max B Input Voltage Noise f > 100kHz 2.5 2.7 2.8 2.9 nV/ √Hz max B Noninverting Input Current Noise f > 100kHz 1.7 2.6 2.8 3.0 pA/ √Hz max B Differential Gain G = +2, NTSC, VO = 1.4VPP, RL = 150Ω 0.003 % typ C Differential Phase G = +2, NTSC, VO = 1.4VPP, RL = 150Ω 0.06 ° typ C All Hostile Crosstalk, Input-Referred 3 Channels Driven at 5MHz, 1VPP 4th Channel Measured −61 dB typ C DC PERFORMANCE(4) Open-Loop Voltage Gain (AOL) VO = 0V, RL = 100Ω 66 62 61 60 dB min A Input Offset Voltage VCM = 0V ±0.25 ±0.8 ±1.2 ±1.5 mV max A Average Input Offset Voltage Drift VCM = 0V 8 10 µV/°C max B Input Bias Current VCM = 0V −9 −20 −22 −26 µA max A Average Input Bias Current Drift VCM = 0V 30 50 nA/ °C max B Input Offset Current VCM = 0V ±100 ±500 ±800 ±900 nA max A Inverting Input Bias Current Drift VCM = 0V 5 5 nA/ °C max B INPUT Common-Mode Input Range (CMIR)(5) ±4.0 ±3.8 ±3.7 ±3.6 V min A Common-Mode Rejection Ratio (CMRR) VCM = 0V, Input-Referred 85 76 75 73 dB min A Input Impedance, Differential Mode VCM = 0V 18 0.8 k Ω pF typ C Input Impedance, Common-Mode VCM = 0V 6 1.0 M Ω pF typ C OUTPUT Output Voltage Swing RL ≥ 500Ω ±3.7 ±3.5 ±3.45 ±3.4 V min A RL = 100Ω ±3.6 ±3.5 ±3.45 ±3.4 V min A Output Current VO = 0 ±85 ±70 ±65 ±60 mA min A Short-Circuit Output Current Output Shorted to Ground ±110 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.04 Ω typ C POWER SUPPLY Specified Operating Voltage ±5 V typ C Maximum Operating Voltage ±6.3 ±6.3 ±6.3 V max A Minimum Operating Voltage ±2 V typ C Maximum Quiescent Current VS = ±5V 22.6 23.4 25 25.8 mA max A Minimum Quiescent Current VS = ±5V 22.6 21.8 20.2 19.4 mA min A Power-Supply Rejection Ratio (−PSRR) Input-Referred 72 64 63 62 dB min A THERMAL CHARACTERISTICS Specification: ID, IPW −40 to +85 °C typ C Thermal Resistance, qJA D SO-14 Junction-to-Ambient 100 °C/W typ C PW TSSOP-14 Junction-to-Ambient 110 °C/W typ C (1) Junction temperature = ambient for +25 °C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +28 °C at high temperature limit for over temperature specifications. (3) Test levels: (A) 100% tested at +25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of pin. (5) Tested < 3dB below minimum specified CMRR at ± CMIR limits. |
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