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OPA4684IDR Datasheet(PDF) 4 Page - Texas Instruments |
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OPA4684IDR Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 33 page  OPA4684 4 SBOS240G www.ti.com OPA4684ID, IPW 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C(2) +85 °C(2) UNITS MAX LEVEL(3) TYP MIN/MAX OVER TEMPERATURE ELECTRICAL CHARACTERISTICS: VS = +5V Boldface limits are tested at +25 °C. RF = 1kΩ, RL = 100Ω to VS/2, and G = +2, (see Figure 3 for AC performance only), unless otherwise noted. AC PERFORMANCE (see Figure 3) Small-Signal Bandwidth (VO = 0.5VPP) G = +1, RF = 1.3kΩ 140 MHz typ C G = +2, RF = 1.3kΩ 110 86 85 82 MHz min B G = +5, RF = 1.3kΩ 100 MHz min C G = +10, RF = 1.3kΩ 90 MHz typ C G = +20, RF = 1.3kΩ 75 MHz typ C Bandwidth for 0.1dB Gain Flatness G = +2, VO < 0.5Vp-p, RF = 1.3kΩ 21 12 11 10 MHz min B Peaking at a Gain of +1 RF = 1.3kΩ, VO < 0.5VPP 0.5 2.6 3.4 3.7 dB max B Large-Signal Bandwidth G = 2, VO = 2VPP 86 MHz typ C Slew Rate G = 2, VO = 2V Step 300 300 290 280 V/ µsmin B G = 2, VO = 0.5V Step 4.3 ns typ C Rise-and-Fall Time G = 2, VO = 2VStep 5.3 ns typ C Harmonic Distortion G = 2, f = 5MHz, VO = 2VPP 2nd-Harmonic RL = 100Ω to VS/2 –65 –60 –59 –59 dBc max B RL ≥ 1kΩ to VS/2 –84 –62 –61 –61 dBc max B 3rd-Harmonic RL = 100Ω to VS/2 –65 –64 –63 –63 dBc max B RL ≥ 1kΩ to VS/2 –74 –70 –70 –69 dBc max B Input Voltage Noise f > 1MHz 3.7 4.1 4.2 4.4 nV/ √Hz max B Noninverting Input Current Noise f > 1MHz 9.4 11 12 12.5 pA/ √Hz max B Inverting Input Current Noise f > 1MHz 17 18 18.5 19 pA/ √Hz max B Differential Gain G = +2, NTSC, VO = 1.4VPP, RL = 150Ω 0.04 % typ C Differential Phase G = +2, NTSC, VO = 1.4VPP, RL = 150Ω 0.07 deg typ C All Hostile X-Talk, Input-Referred 3-Channels Driven at 5MHz, 1VPP –52 dB typ C 4th Channel Measured DC PERFORMANCE(4) Open-Loop Transimpedance Gain (ZOL) VO = VS/2, RL = 1kΩ to VS/2 355 160 155 153 k Ω min A Input Offset Voltage VCM = VS/2 ±1.0 ±3.5 ±4.1 ±4.3 mV max A Average Offset Voltage Drift VCM = VS/2 ±12 ±12 µV/°Cmax B Noninverting Input Bias Current VCM = VS/2 ±5 ±13 ±14.5 ±15 µAmax A Average Noninverting Input Bias Current Drift VCM = VS/2 ±25 ±30 nA/ °Cmax B Inverting Input Bias Current VCM = VS/2 ±5 ±13 ±14.5 ±16 µAmax A Average Inverting Input Bias Current Drift VCM = VS/2 ±25 ±30 nA °/C max B INPUT Least Positive Input Voltage(5) 1.25 1.32 1.35 1.38 V max A Most Positive Input Voltage(5) 3.75 3.68 3.65 3.62 V min A Common-Mode Refection Ratio (CMRR) VCM = VS/2 58 51 50 50 dB min A Noninverting Input Impedance 50 || 1 k Ω || pF typ C Inverting Input Resistance (RI) Open-Loop 5 Ω typ C OUTPUT Most Positive Output Voltage RL = 1kΩ to VS/2 4.10 3.9 3.9 3.8 V min A Least Positive Output Voltage RL = 1kΩ to VS/2 0.9 1.1 1.1 1.2 V max A Current Output, Sourcing VO = VS/2 80 65 60 55 mA min A Current Output, Sinking VO = VS/2 70 55 50 45 mA min A Closed-Loop Output Impedance G = +2, f = 100kHz 0.006 Ω typ C POWER SUPPLY Specified Single-Supply Operating Voltage 5 V typ C Max Single-Supply Operating Voltage 12 12 12 V max A Min Single-Supply Operating Voltage 2.8 V min C Max Quiescent Current VS = +5V/per Channel 1.45 1.55 1.55 1.55 mA max A Min Quiescent Current VS = +5V/per Channel 1.45 1.30 1.20 1.15 mA min A Power-Supply Rejection Ratio (+PSRR) Input-Referred 58 dB typ C TEMPERATURE RANGE Specification: ID, IPW –40 to +85 °C typ C Thermal Resistance, θ JA Junction-to-Ambient D SO-14 100 °C/W typ C PW TSSOP-14 110 °C/W typ C NOTES: (1) Junction temperature = ambient for +25 °C tested specifications. (2) Junction temperature = ambient at low temperature limit, junction temperature = ambient +3 °C at high temperature limit for over temperature tested specifications. (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-of-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMR at ± CMIR limits. |
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