Electronic Components Datasheet Search |
|
RGP02-12E Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
|
RGP02-12E Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page TJ=25℃ PU LSE W IDTH=300 μ s 2% DU TY CYC LE 0.6 0.001 0.01 0.1 1.0 2.0 0.8 1 .0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.01 0 TJ-100℃ 0.1 1.0 20 10 40 60 80 100 120 140 TJ-25℃ Single Phase Half Wave 60H Z Resistive or Inductive Load 0 0 0.1 0.2 0.3 0.4 0.5 6 25 50 75 100 125 150 175 -1.0A -0.25A 0 +0.5A trr PULSE GENERATOR (NOTE2) D.U.T. 1Ω N.1. 50Ω N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) 10Ω N.1. (- ) (+ ) 0 1100 15 10 TJ=25℃ 8.3ms Single Half Sine-Wave 10 5 20 25 24 6 20 40 60 RGP02-12E(Z)---RGP02-20E(Z) SETTIMEBASEFOR50/100 ns /cm AMBIENTTEMPERATURE, ℃ NUMBER OF CYCLES AT60 Hz NOTES:1.RISETIME=75ns MAX. INPUTIMPEDANCE=1M Ω.22pF FIG.1 -- REVERSERECORERY TIME CHARACTERISTICAND TEST CIRCUIT DIAGRAM FIG.2 --DERATING DURVE FOR OUTPUT FORWARD VOLTAGE,VOLTS PERCENTOF FATED REVERSEVOLTAGE,% FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.5--TYPICAL REVERSE CHARACTERISTICS 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5OΩ FORWARD SURGECURRENT FIG.3 --MAXIMUM NON-REPETITIVEPEAK RECTIFIED CURRENT www.diode.kr Diode Semiconductor Korea |
Similar Part No. - RGP02-12E |
|
Similar Description - RGP02-12E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |