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ISO7841 Datasheet(PDF) 7 Page - Texas Instruments |
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ISO7841 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 37 page 7 ISO7841, ISO7841F www.ti.com SLLSEM3F – NOVEMBER 2014 – REVISED APRIL 2016 Product Folder Links: ISO7841 ISO7841F Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information ISO7841 UNIT THERMAL METRIC(1) DW (SOIC) DWW (SOIC) 16 Pins 16 Pins RθJA Junction-to-ambient thermal resistance 78.9 78.9 °C/W RθJC(top) Junction-to-case(top) thermal resistance 41.6 41.1 °C/W RθJB Junction-to-board thermal resistance 43.6 49.5 °C/W ψJT Junction-to-top characterization parameter 15.5 15.2 °C/W ψJB Junction-to-board characterization parameter 43.1 48.8 °C/W RθJC(bottom) Junction-to-case(bottom) thermal resistance N/A N/A °C/W 6.5 Power Dissipation Characteristics VALUE UNIT PD Maximum power dissipation by ISO78410x VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, input a 50 MHz 50% duty cycle square wave 200 mW PD1 Maximum power dissipation by side-1 of ISO78410x 50 PD2 Maximum power dissipation by side-2 of ISO78410x 150 |
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