INA128, INA129

SBOS051C – OCTOBER 1995 – REVISED OCTOBER 2015

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Electrical Characteristics (continued)

At TA = 25°C, VS = ±15 V, RL = 10 k

Ω, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

G = 1

±1

±10

ppm/°C

50-k

±25

±100

INA128P, U

±0.0001

±0.001

INA129P, U

INA128PA, UA

±0.002

INA129PA, UA

INA128P, U

±0.0003

±0.002

INA129P, U

G = 10

Nonlinearity

INA128PA, UA

% of FSR

±0.004

INA129PA, UA

INA128P, U

±0.0005

±0.002

INA129P, U

G = 100

INA128PA, UA

±0.004

INA129PA, UA

G = 1000

±0.001

Positive

(V+) - 1.4

(V+) - 0.9

Voltage

V

Negative

(V-) + 1.4

(V-) + 0.8

Load Capacitance Stability

1000

pF

Short Circuit Current

6/–15

mA

FREQUENCY RESPONSE

G = 1

1.3

MHz

G = 10

700

Bandwidth, –3 dB

G = 100

200

kHz

G = 1000

20

Slew Rate

4

V/µs

G = 1

7

G = 10

7

Settling Time, 0.01%

µs

G = 100

9

G = 1000

80

Overload Recovery

50% Overdrive

4

µs

POWER SUPPLY

Voltage Range

±2.25

±15

±18

V

Current, Total

±700

±750

µA

TEMPERATURE RANGE

Specification

–40

85

°C

Operating

–40

125

°C

(2)

Specified by wafer test.

(3)

Temperature coefficient of the 50 k

Ω (or 49.4 kΩ) term in the gain equation.

(4)

Nonlinearity measurements in G = 1000 are dominated by noise. Typical non-linearity is ±0.001%.

6

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