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ISO7830FDWW Datasheet(PDF) 6 Page - Texas Instruments |
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ISO7830FDWW Datasheet(HTML) 6 Page - Texas Instruments |
6 / 37 page 6 ISO7830, ISO7830F SLLSEO2B – JULY 2015 – REVISED JUNE 2016 www.ti.com Product Folder Links: ISO7830 ISO7830F Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) ISO7830 UNIT DW (SOIC) DWW (SOIC) 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 81.1 83.4 °C/W RθJC(top) Junction-to-case(top) thermal resistance 43.8 45.2 °C/W RθJB Junction-to-board thermal resistance 45.7 54.1 °C/W ψJT Junction-to-top characterization parameter 17.0 17.6 °C/W ψJB Junction-to-board characterization parameter 45.2 53.3 °C/W RθJC(bottom) Junction-to-case(bottom) thermal resistance — — °C/W 6.5 Power Rating PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PD Maximum power dissipation VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, input a 50 MHz 50% duty cycle square wave 150 mW PD1 Maximum power dissipation by side-1 25 mW PD2 Maximum power dissipation by side-2 125 mW |
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