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ISO7340-Q1, ISO7341-Q1, ISO7342-Q1

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SLLSEK5A – JULY 2015 – REVISED AUGUST 2016

Product Folder Links: ISO7340-Q1 ISO7341-Q1 ISO7342-Q1

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Copyright © 2015–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V.

7 Specifications

7.1 Absolute Maximum Ratings

See

(1)

MIN

MAX

UNIT

–0.5

6

V

Voltage

INx, OUTx, ENx

–0.5

(3)

V

Output current

±15

mA

Maximum junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±4000

V

Charged-device model (CDM), per AEC Q100-011

±1500

(1)

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

3

5.5

V

High-level output current

–4

mA

Low-level output current

4

mA

High-level input voltage

2

5.5

V

Low-level input voltage

0

0.8

V

Input pulse duration

40

ns

Signaling rate

0

25

Mbps

136

°C

Ambient temperature

–40

25

125

°C