© Semiconductor Components Industries, LLC, 2004

October, 2004 − Rev. 3

1

Publication Order Number:

NTHS5404T1/D

NTHS5404

Power MOSFET

20 V, 7.2 A, N−Channel ChipFET

E

Features

Applications

Cellular and Cordless Telephones and PCMCIA Cards

Rating

Symbol

5 Secs

Steady

State

Unit

Drain−Source Voltage

20

V

Gate−Source Voltage

"12

V

Continuous Drain Current

7.2

5.2

5.2

3.8

A

Pulsed Drain Current

"20

A

Continuous Source Current

(Diode Conduction) (Note 1)

7.2

5.2

A

Maximum Power Dissipation

(Note 1)

2.5

1.3

1.3

0.7

W

Operating Junction and Storage

Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

Device

Package

ORDERING INFORMATION

NTHS5404T1

ChipFET

3000/Tape & Reel

G

D

S

D

D

D

D

D

1

2

3

4

5

6

7

8

PIN

CONNECTIONS

G

D

S

N−Channel MOSFET

ChipFET

CASE 1206A

STYLE 1

MARKING

DIAGRAM

A2 = Specific Device Code

M = Month Code

1

2

3

4

8

7

6

5

http://onsemi.com

20 V

25 m

W @ 4.5 V

7.2 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NTHS5404T1G

ChipFET

(Pb−Free)

3000/Tape & Reel