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NE57810 Datasheet(PDF) 11 Page - NXP Semiconductors

Part # NE57810
Description  Advanced DDR memory termination power with external reference in
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE57810 Datasheet(HTML) 11 Page - NXP Semiconductors

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Philips Semiconductors
Product data
NE57810
Advanced DDR memory termination power
with external reference in
2003 Sep 12
11
Cascading the NE57810 for complex memory systems
For high-performance computer systems, sometimes memory banks
are driven 180 degrees out of phase with one another such that the
apparent access time is halved (even and odd memory addresses).
To do this, it is recommended that two NE57810s are used, one to
terminate each memory bank.
Cascading NE57810 terminators offers two advantages, it improves
the system noise performance by bringing the memory SIMMs
closer to the terminator, and distributes any heat generated by the
terminator system. By using the RefOut pin from one NE57810 to
the ExtRefIn pin for the other NE57810(s) used in the system, one
can always guarantee that the VTT voltages are identical. Because
of the very tight output voltage regulation of the NE57810, the VTT
outputs should never be wired together. This is because the
terminators would ‘fight’ one another if their output were different by
only a few millivolts. This method can be used in either the normal
operating mode and the externally programmed operating mode.
This method of use can be seen in Figure 14.
SL01680
VDD
VTT
ExtRefIn
RefOut
VSS
+VTT1
Master
NE57810
+VDD
GND
CIN
COUT
(LF)
COUT
(HF)
VREF
GND
VDD
VTT
ExtRefIn
RefOut
VSS
+VTT2
Slave
NE57810
CIN
COUT
(LF)
COUT
(HF)
GND
TO OTHER
NE57810s
Figure 14.
Cascading terminator systems for complex memory systems.


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