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A1365LKTTN-2-T Datasheet(PDF) 24 Page - Allegro MicroSystems |
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A1365LKTTN-2-T Datasheet(HTML) 24 Page - Allegro MicroSystems |
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24 / 32 page 
Low-Noise, High-Precision, Programmable Linear Hall-Effect Sensor IC With High-Bandwidth (120 kHz) Analog Output and Integrated Fault Comparator A1365 24 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com The A1365 incorporates a serial interface that allows an external controller to read and write registers in the EEPROM and volatile memory. The A1365 uses a point-to-point communication pro- tocol, based on Manchester encoding per G. E. Thomas (a rising edge indicates 0 and a falling edge indicates 1), with address and data transmitted MSB first. Transaction Types Each transaction is initiated by a command from the controller; the A1365 does not initiate any transactions. Three commands are recognized by the A1365: Write Access Code, Write, and Read. One response frame type is generated by the A1365, Read Acknowledge. If the command is Read, the A1365 responds by transmitting the requested data in a Read Acknowledge frame. If the command is any other type, the A1365 does not acknowledge. As shown in Figure 20, the A1365 receives all commands via the VCC pin. It responds to Read commands via the VOUT pin. This implementation of Manchester encoding requires the communica- tion pulses be within a high (VMAN(H)) and low (VMAN(L)) range of voltages for the VCC line and the VOUT line. The Write command to EEPROM is supported by two high-voltage pulses on the VOUT line. Writing the Access Code In order for the external controller to write or read from the A1365 memory during the current session, it must establish serial communication with the A1365 by sending a Write command including the Access Code within Access Code Timeout (tACC) from power-up. If this deadline is missed, all write and read access is disabled until the next power-up. Writing to Volatile Memory In order for the external controller to write to volatile memory, a Write command must be transmitted on the VCC pin. Succes- sive Write commands to volatile memory must be separated by tWRITE. The required sequence is shown in Figure 21. Figure 20: Top-Level Programming Interface A1365 GND O V FAULT UT V VCC RF(PULLUP) CC Controller Write/Read Command –Manchester Code Read Acknowledge – Manchester Code High Voltage pulses to activate EEPROM cells VCC t t WRITE t WRITE Next Command Previous Command Write to Register R# Figure 21: Writing to Volatile Memory PROGRAMMING SERIAL INTERFACE |
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