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A1365LKTTN-1-T Datasheet(PDF) 24 Page - Allegro MicroSystems

Part No. A1365LKTTN-1-T
Description  Low-Noise, High-Precision, Programmable Linear Hall-Effect Sensor IC
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Maker  ALLEGRO [Allegro MicroSystems]
Homepage  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

A1365LKTTN-1-T Datasheet(HTML) 24 Page - Allegro MicroSystems

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Low-Noise, High-Precision, Programmable Linear Hall-Effect Sensor IC
With High-Bandwidth (120 kHz) Analog Output and Integrated Fault Comparator
A1365
24
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
The A1365 incorporates a serial interface that allows an external
controller to read and write registers in the EEPROM and volatile
memory. The A1365 uses a point-to-point communication pro-
tocol, based on Manchester encoding per G. E. Thomas (a rising
edge indicates 0 and a falling edge indicates 1), with address and
data transmitted MSB first.
Transaction Types
Each transaction is initiated by a command from the controller;
the A1365 does not initiate any transactions. Three commands
are recognized by the A1365: Write Access Code, Write, and
Read. One response frame type is generated by the A1365, Read
Acknowledge. If the command is Read, the A1365 responds by
transmitting the requested data in a Read Acknowledge frame. If
the command is any other type, the A1365 does not acknowledge.
As shown in Figure 20, the A1365 receives all commands via the
VCC pin. It responds to Read commands via the VOUT pin. This
implementation of Manchester encoding requires the communica-
tion pulses be within a high (VMAN(H)) and low (VMAN(L)) range
of voltages for the VCC line and the VOUT line. The Write
command to EEPROM is supported by two high-voltage pulses
on the VOUT line.
Writing the Access Code
In order for the external controller to write or read from the
A1365 memory during the current session, it must establish serial
communication with the A1365 by sending a Write command
including the Access Code within Access Code Timeout (tACC)
from power-up. If this deadline is missed, all write and read
access is disabled until the next power-up.
Writing to Volatile Memory
In order for the external controller to write to volatile memory,
a Write command must be transmitted on the VCC pin. Succes-
sive Write commands to volatile memory must be separated by
tWRITE. The required sequence is shown in Figure 21.
Figure 20: Top-Level Programming Interface
A1365
GND
O
V
FAULT
UT
V
VCC
RF(PULLUP)
CC
Controller
Write/Read Command
–Manchester Code
Read Acknowledge
Manchester Code
High Voltage pulses to
activate EEPROM cells
VCC
t
t
WRITE
t
WRITE
Next
Command
Previous
Command
Write
to Register R#
Figure 21: Writing to Volatile Memory
PROGRAMMING SERIAL INTERFACE


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