Low Noise, High Precision, Programmable Linear Hall Effect Sensor IC

With Advanced Temperature Compensation

And High Bandwidth (120 kHz) Analog Output

A1363

27

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

EEPROM CELL ORGANIZATION

Programming coefficients are stored in non-volatile EEPROM,

which is separate from the digital subsystem, and accessed by the

digital subsystem EEPROM Controller module. The EEPROM

is organized as 30 bit wide words, each word is made up of 24

data bits and 6 ECC (Error Checking and Correction) check bits,

stored as shown in table below.

EEPROM Word Bit Sequence; C# – Check Bit, D# – Data Bit

14

13

12

11

10

9

8

7

6

5

4

3

2

1

0

D14

D13

D12

D11

D10

D9

D8

D7

D6

D5

D4

D3

D2

D1

D0

EEPROM Bit

29

28

27

26

25

24

23

22

21

20

19

18

17

16

15

Contents

C5

C4

C3

C2

C1

C0 D23 D22 D21 D20 D19 D18 D17 D16 D15

Memory Address Map

Register Name

Address

Description

r/w

Bits

Location

Customer Access EEPROM

0x00

Sensitivity, two’s complement DAC profile

r/w

9

8:0

SENS_COARSE

Coarse Sensitivity

r/w

2

10:9

Quiescent Output Voltage, two’s complement

DAC profile

r/w

9

19:11

Factory reserved bit

r/w

1

20

POL

Reverses output polarity

r/w

1

21

CLAMP_DIS

Clamp Disable

r/w

1

22

EELOCK

EEPROM LOCK

w

1

23

0x01

Customer Reserved

r/w

24

23:0

Customer Debug Register (Volatile Memory)

Disable Analog Output

0x10

Turns off the analog output for serial

communications

w

1

0

Shadow Enable

Enables register shadowing to bypass

EEPROM register 0x00 bits 22:0

w

1

1

1

9-bit two’s complement integers, where the most positive number is indicated by code 255 (decimal) and the most negative number by code 256 (decimal).

2

Customer should not write to this bit.

3

Can be used to store any information required in the customer’s application.