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GM72V66841CT Datasheet(PDF) 28 Page - LG Semicon Co.,Ltd. |
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GM72V66841CT Datasheet(HTML) 28 Page - LG Semicon Co.,Ltd. |
28 / 57 page LG Semicon GM72V66841CT/CLT WRITE to WRITE Command Interval (different bank) Read command to Write command interval: 1. Same bank, same Row address: read command, the write command can be performed after an interval of no less than 1 cycle. However, DQM, DQMU/DQML must be set High-Z so that the output buffer becomes High-Z before data input. When the write command is executed at the same ROW address of the same bank as the preceding 27 READ to WRITE Command Interval (1) CLK Command DQM, DQMU /DQML CL=2 CL=3 Din in B1 in B2 in B3 Burst Length = 4 Burst Write WRIT in B0 READ Dout High-Z Din in B3 in B1 in B2 Burst Write Mode Burst Length = 4 CLK Command Address (A0-A11) BS(A12/A13) in A0 in B0 ACTV ACTV WRIT Row 0 Row 1 Column A WRIT Column B Bank0 Active Bank3 Active Bank0 Write Bank3 Write |
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