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DS75365 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. DS75365
Description  Quad TTL-to-MOS Driver
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com

DS75365 Datasheet(HTML) 5 Page - National Semiconductor (TI)

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TLF7560 – 7
FIGURE 2 Interconnection of DS75365 Devices
with 1103-Type Silicon-Gate MOS RAM
Typical Applications
The fast switching speeds of this device may produce unde-
sirable output transient overshoot because of load or wiring
inductance A small series damping resistor may be used to
reduce or eliminate this output transient overshoot The op-
timum value of the damping resistor depends on the specific
load characteristics and switching speed A typical value
would be between 10X and 30X (
Figure 3 )
Note RD j 10X to 30X (Optional)
TLF7560 – 8
FIGURE 3 Use of Damping Resistor to Reduce or
Eliminate Output Transient Overshoot in Certain
DS75365 Applications
Thermal Information
Significant power may be dissipated in the DS75365 driver
when charging and discharging high-capacitance loads over
a wide voltage range at high frequencies The total dissipa-
tion curve shows the power dissipated in a typical DS75365
as a function of load capacitance and frequency Average
power dissipation by this driver can be broken into three
PT(AV) e PDC(AV) a PC(AV) a PS(AV)
where PDC(AV) is the steady-state power dissipation with the
output high or low PC(AV) is the power level during charging
or discharging of the load capacitance and PS(AV) is the
power dissipation during switching between the low and
high levels None of these include energy transferred to the
load and all are averaged over a full cycle
The power components per driver channel are
PC(AV) j CVC2f
PS(AV) e
where the times are as defined in
Figure 4
PL PH PLH and PHL are the respective instantaneous lev-
els of power dissipation and C is load capacitance
The DS75365 is so designed that PS is a negligible portion
of PT in most applications Except at very high frequencies
tL a tH n tLH a tHL so that PS can be neglected The total
dissipation curve for no load demonstrates this point The
power dissipation contributions from all four channels are
then added together to obtain total device power
The following example illustrates this power calculation
technique Assume all four channels are operating identical-
ly with C e 100 pF f e 2 MHz VCC1 e 5V VCC2 e 20V
VCC3 e 24V and duty cycle e 60% outputs high
(tH T e 06) Also assume VOH e 20V VOL e 01V PS is
negligible and that the current from VCC2 is negligible when
the output is low
On a per-channel basis using data sheet values
PDC(AV) e (5V)
4mA4J a(20V) b22mA
J a(24V)
J( (06)a (5V) 31mA
J a
0mA4J a(24V) 16mA
J( (04)
PDC(AV) e 58 mW per channel
PC(AV) j (100 pF) (199V)2 (2 MHz)
PC(AV) j 79 mW per channel
For the total device dissipation of the four channels
PT(AV) j 4 (58 a79)
PT(AV) j 548 mW typical for total package
TLF7560 – 9
FIGURE 4 Output Voltage Waveform

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