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REF6145IDGKT Datasheet(PDF) 4 Page - Texas Instruments |
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REF6145IDGKT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 36 page 4 REF6125, REF6130, REF6133, REF6141, REF6145, REF6150 SBOS747B – MAY 2016 – REVISED AUGUST 2016 www.ti.com Product Folder Links: REF6125 REF6130 REF6133 REF6141 REF6145 REF6150 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Input voltage VIN –0.3 6 V VEN –0.3 VIN + 0.3 V Operating temperature, TA –55 150 °C Junction temperature, Tj 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250 7.3 Recommended Operating Conditions MIN NOM MAX UNIT VIN Supply input voltage (IOUT = 0 mA) REF6125 3 5.5 V REF6130, REF6133, REF6141, REF6145 VOUT + 0.25 5.5 REF6150 5.3 5.5 VEN Enable voltage 0 VIN V IL Output current REF6125, REF6130, REF6133, REF6141 –4 4 mA REF6145 –3.5 3.5 REF6150 –3 3 TA Operating temperature –40 25 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) REF61xx UNIT DGK (VSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 158.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 51.2 °C/W RθJB Junction-to-board thermal resistance 79.5 °C/W ψJT Junction-to-top characterization parameter 5.2 °C/W ψJB Junction-to-board characterization parameter 78.0 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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