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SI4488DY-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4488DY-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4488DY Vishay Siliconix www.vishay.com 2 Document Number: 71240 S-03951—Rev. B, 26-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 5 A 0.041 0.050 W Forward Transconductancea gfs VDS = 15 V, ID = 5 A 18 S Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg 30 36 Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 5 A 8.5 nC Gate-Drain Charge Qgd 8.5 Gate Resistance Rg 0.2 0.85 1.2 W Turn-On Delay Time td(on) 12 18 Rise Time tr VDD = 75 V, RL = 15 W 7 11 Turn-Off Delay Time td(off) VDD = 75 V, RL = 15 W ID ^ 5 A, VGEN = 10 V, RG = 6 W 22 33 ns Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/ms 40 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 012 34 567 0 10 20 30 40 50 0 2468 10 VGS = 10 thru 7 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 6 V 5 V 3, 4 V |
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