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MMBD452 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MMBD452 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 3 page Dual Hot-Carrier Diodes MMBD452 FEATURES Very low capacitance. Extremely low minority carrier lifetime. Low reverse leakage. Power dissipation Pd=225mW. APPLICATIONS Designed primarily for UHF and VHF detector SOT-23 applications. ORDERING INFORMATION Type No. Marking Package Code MMBD452 5N SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 30 V Power Dissipation Pd 225 mW Operating junction temperature range TJ -55 to+125 ℃ Junction and storage temperature TSTG -55 to+150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage V(BR) 30 V IR=10μA Forward voltage VF 0.38 0.52 0.45 0.6 V IF=1.0mA IF=10mA Reverse current IR 13 200 nA VR=25V Total Capacitanc CT 0.9 1.5 pF VR=15V,f=1MHz Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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