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FQPF10N60C Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FQPF10N60C
Description  600V N-Channel MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF10N60C Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
QFETTM
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP10N60C
FQPF10N60C
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
9.5
9.5 *
A
- Continuous (TC = 100°C)
3.3
3.3 *
A
IDM
Drain Current
- Pulsed
(Note 1)
38
38 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
mJ
IAR
Avalanche Current
(Note 1)
9.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
156
50
W
- Derate above 25°C
1.25
0.4
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP10N60C
FQPF10N60C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.8
2.5
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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