BC847BVN datasheet(5/8 Pages) PHILIPS

Part #	BC847BVN

Description	NPN/PNP general purpose transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 8 page

2001 Nov 07

5

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistor

BC847BVN

handbook, halfpage

0

1000

200

400

600

800

MLD699

−10−2

−10−1

(1)

−1

IC (mA)

hFE

−10

−102

−103

(2)

(3)

Fig.6

DC current gain as a function of collector

current: typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD700

−10−2

−10−1

(1)

−1

IC (mA)

VBE

mV

−10

−102

−103

(3)

(2)

Fig.7

Base-emitter voltage as a function of

collector current; typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLD701

−10−1

−1

−10

IC (mA)

VCEsat

(mV)

−102

−103

(1)

(2)

(3)

Fig.8

Collector-emitter saturation voltage as a

function of collector current: typical values.

TR2 (PNP); IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD702

−1

−10−1

IC (mA)

VBEsat

(mV)

−10

−102

−103

(1)

(3)

(2)

Fig.9

Base-emitter saturation voltage as a

function of collector current.

TR2 (PNP); IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

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