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SUD50P04-09L Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SUD50P04-09L
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-09L Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Document Number: 72243
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50P04-09L
New Product
TYPICAL CHARACTERISTICS
25 °C unless noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72243.
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
VGS = 10 V
ID = 50 A
Source-Drain Diode Forward Voltage
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
100
10
1
TJ = 25 °C
TJ = 150 °C
Maximum Avalanche and Drain Current
vs. Case Temperature
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
1
100
TC = 25 °C
Single Pulse
IDM Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10-4
10-3
10-2
10-1
1
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Single Pulse


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