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SUD50P04-09L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD50P04-09L
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-09L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Document Number: 72243
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50P04-09L
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = - 250 µA
- 40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 32 V, VGS = 0 V
- 1
µA
VDS = - 32 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 32 V, VGS = 0 V, TJ = 175 °C
- 150
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
- 50
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 10 V, ID = - 24 A
0.0075
0.0094
Ω
VGS = - 10 V, ID = - 50 A, TJ = 125 °C
0.014
VGS = - 10 V, ID = - 50 A, TJ = 175 °C
0.017
VGS = - 4.5 V, ID = - 18 A
0.0115
0.0145
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 24 A
73
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
4800
pF
Output Capacitance
Coss
700
Reverse Transfer Capacitance
Crss
550
Total Gate Chargec
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 50 A
102
150
nC
Gate-Source Chargec
Qgs
18.5
Gate-Drain Chargec
Qgd
27
Turn-On Delay Timec
td(on)
VDD = - 20 V, RL = 0.4 Ω
ID ≅ - 50 A, VGEN = - 10 V, RG = 6 Ω
10
15
ns
Rise Timec
tr
60
90
Turn-Off Delay Timec
td(off)
145
220
Fall Timec
tf
140
220
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
b
Continuous Current
IS
- 50
A
Pulsed Current
ISM
- 100
Forward Voltagea
VSD
IF = - 50 A, VGS = 0 V
- 1.0
- 1.5
V
Reverse Recovery Time
trr
IF = - 50 A, di/dt = 100 A/µs
55
85
ns


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