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SUD50P04-09L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUD50P04-09L
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-09L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Vishay Siliconix
SUD50P04-09L
Document Number: 72243
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
New Product
P-Channel 40-V (D-S), 175 °C MOSFET
FEATURES
TrenchFET® Power MOSFETS
175 °C Junction Temperature
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
d
- 40
0.0094 at VGS = - 10 V
- 50
0.0145 at VGS = - 4.5 V
- 50
TO-252
S
GD
Top View
Drain Connected to Tab
Ordering Information: SUD50P04-09L
SUD50P04-09L (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
Notes:
a. Duty cycle
≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
- 50d
A
TC = 125 °C
- 50d
Pulsed Drain Current
IDM
- 100
Avalanche Current
IAS
- 50
Single Avalanche Energya
L = 0.1 mH
EAS
125
mJ
Power Dissipation
TC = 25 °C
PD
136c
W
TA = 25 °C
3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambientb
t
≤ 10 sec
RthJA
15
18
°C/W
Steady State
40
50
Junction-to-Case
RthJC
0.82
1.1
Available
RoHS*
COMPLIANT


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