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SUD50P04-09L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUD50P04-09L Datasheet(HTML) 1 Page - Vishay Siliconix |
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Vishay Siliconix SUD50P04-09L Document Number: 72243 S-71660-Rev. B, 06-Aug-07 www.vishay.com 1 New Product P-Channel 40-V (D-S), 175 °C MOSFET FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) d - 40 0.0094 at VGS = - 10 V - 50 0.0145 at VGS = - 4.5 V - 50 TO-252 S GD Top View Drain Connected to Tab Ordering Information: SUD50P04-09L SUD50P04-09L (Lead (Pb)-free) S G D P-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - 50d A TC = 125 °C - 50d Pulsed Drain Current IDM - 100 Avalanche Current IAS - 50 Single Avalanche Energya L = 0.1 mH EAS 125 mJ Power Dissipation TC = 25 °C PD 136c W TA = 25 °C 3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambientb t ≤ 10 sec RthJA 15 18 °C/W Steady State 40 50 Junction-to-Case RthJC 0.82 1.1 Available RoHS* COMPLIANT |
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