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FDB103S Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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FDB103S Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 1.2± 0.3 1± 0.1 8.3± 0.1 5± 0.2 6.4± 0.1 7.9± 0.2 10± 0.6 FEATURES Rating to 1000V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FDB 103S FDB 104S FDB 105S FDB 106S FDB 107S UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forw ard Output current @T A=25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A VF V Maximum reverse current @T A=25 μA at rated DC blocking voltage @T A=100 mA Operating junction temperature range TJ Storage temperature range TSTG FDB 101S FDB 102S 50 100 1.3 1.0 30.0 IFSM FDB101S --- FDB107S A 10.0 Lead solderable per MIL-STD-202 method 208 IF(AV) 1.0 SILICON BRIDGE RECTIFIERS Lead: silver plated copper, solderde plated A - 55 ---- + 150 - 55 ---- + 125 IR 100 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 35 5 0 DB - S Plastic material has UL flammability classification Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams Dimensions in millimeters Maximum reverse recovery time (Note1) t rr 150 250 500 ns NOTE:1. Measured with I F=0.5A,IR=1A, I rr=0.25A. Diode Semiconductor Korea www.diode.kr |
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