LP5910-1.8YKAR datasheet(9/29 Pages) TI1

Part #	LP5910-1.8YKAR

Description	LP5910 300-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

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Manufacturer	TI1 [Texas Instruments]

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IOUT (mA)

0

50

100

150

200

250

300

0

25

50

75

100

125

150

175

200

225

250

D017

VIN = 3.3 V

VIN = 1.3 V

IOUT (mA)

0

50

100

150

200

250

300

0

25

50

75

100

125

150

175

200

225

250

D018

VIN = 3.3 V

VIN = 2.3 V

Frequency (Hz)

10

100

1000

10000

100000

1000000

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

D015

1 mA

300 mA

Junction Temperature (°C)

-50

-25

0

25

50

75

100

125

-1.5

-1.25

-1

-0.75

-0.5

-0.25

0

0.25

0.5

0.75

1

1.25

1.5

D016

Frequency (Hz)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

10

100

1k

10k

100k

1M

10M

D013

Frequency (Hz)

10

100

1000

10000

100000

1000000

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

D014

1 mA

300 mA

9

LP5910

www.ti.com

SNVSA91C – SEPTEMBER 2015 – REVISED JUNE 2016

Product Folder Links: LP5910

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Typical Characteristics (continued)

Unless otherwise stated: VOUT = 1.8 V, VIN = VOUT + 0.5 V, VEN = VIN, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TJ = 25°C.

VOUT = 2.3 V

VIN = 2.8 V

IOUT = 20 mA

Figure 13. PSRR vs Frequency

VOUT = 0.8 V

VIN = 1.3 V

Figure 14. Noise Density

VOUT = 2.3 V

VIN = 2.8 V

Figure 15. Noise Density

VIN = VOUT + 0.5 V

IOUT = 1 mA

Figure 16. ΔVOUT vs Temperature

VOUT = 0.8 V

Figure 17. IGND vs IOUT

VOUT = 1.8 V

Figure 18. IGND vs IOUT

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LP5910-1.8YKAR Datasheet(PDF) 9 Page - Texas Instruments

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