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SUF4005 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SUF4005 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction MECHANICAL DATA ◇ Case:JEDEC DO-213AB,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0046 ounces, 0.116 gram ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. 4001 4003 4004 4005 4006 4007 Maximum recurrent peak reverse voltage VRRM 50 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 200 400 600 800 1000 V Maximum average forword rectified current TA=50℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at 1.0A VF V Maximum DC reverse current @Tj=25℃ at rated DC blockjing voltage @Tj=100℃ Maximum reverse recovery time (Note1) trr ns Typical thermal resistance (NOTE 2) RθJT K/W Typical thermal resistance (NOTE 3) RθJA K/W Operating temperature range Tj ℃ Storage temperature range TSTG ℃ 2. Thermal resistance junction to terminal, 6.0 mm 2 coppeer pads to each terminal. 3. Thermal resistance junction to ambient, 6.0 mm 2 coppeer pads to each terminal. REVERSE VOLTAGE: 50 - 1000 V IFSM 1.0 1.7 - 55 --- + 175 A CURRENT: 1.0 A SOLDERABLE ENDS D2 D2=D1 +0 -0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 DO - 213AB 70 100 SURFACE MOUNT RECTIFIER S µA 50 75 SUF4001 --- SUF4007 30 10 45 4002 UNITS SUF SUF SUF SUF SUF SUF SUF 50 100 10 NOTES:1. Measured with IF=0.5A, IR=1A, Irr=0.25A. A IR - 55 --- + 175 I(AV) 1.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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