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TLV2342IPW Datasheet(PDF) 3 Page - Texas Instruments |
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TLV2342IPW Datasheet(HTML) 3 Page - Texas Instruments |
3 / 43 page TLV2342, TLV2342Y, TLV2344, TLV2344Y LinCMOS ™ LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS SLOS194 – FEBRUARY 1997 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLV2344Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2344. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. + – 1OUT 1IN + 1IN – VDD (4) (3) (2) (1) VDD – /GND + – 3OUT 3IN + 3IN – (10) (9) (8) + – 2OUT 2IN + 2IN – (3) (5) (6) (7) + – 4OUT 4IN + 4IN – (12) (13) (14) (11) 68 108 (8) (9) (10) (11) (12) (13) (14) (1) (2) (3) (4) (5) (6) (7) |
Similar Part No. - TLV2342IPW |
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Similar Description - TLV2342IPW |
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