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TLV2341Y Datasheet(PDF) 4 Page - Texas Instruments |
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TLV2341Y Datasheet(HTML) 4 Page - Texas Instruments |
4 / 53 page TLV2341, TLV2341Y LinCMOS ™ PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS SLOS110A – MAY 1992 – REVISED AUGUST 1994 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLV2341Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2341. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. + – OUT IN + IN – VDD (7) (3) (2) (6) (4) GND (1) (5) OFFSET N1 OFFSET N2 (8) BIAS SELECT 48 55 (8) (7) (2) (1) (6) (5) (4) (3) |
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