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RS3MB Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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RS3MB Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page 2.0 1.0 0 50 Resistive or inductive Load P.C.B.MOUNTED ON 0.27''X0.27''(7.0X7.0mm) COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 160 1 1 0 1 00 TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 100 80 60 40 20 0 0.4 0.01 0.1 1 10 0.6 0.8 1.0 1.2 1.4 1.6 TJ=25 C O Puise Width=300 S 1%DUTY CYCLE 1.8 20 20 0 0.1 40 1 TJ=25 C 60 80 100 0 10 100 TJ=125 C 0 10 1 1000 .1 100 TJ=25 C f=1.0MHZ Vsig=50mVp-p 0 20 30 40 60 REVERSE VOLTAGE,VOLTS LEAD TEMPERATURE NUMBER OF CYCLES AT60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE RS3AB---RS3MB FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT 4 www.diode.kr Diode Semiconductor Korea |
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