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MTD10N10EL Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MTD10N10EL
Description  TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MTD10N10EL Datasheet(HTML) 2 Page - ON Semiconductor

   
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MTD10N10EL
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
115
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
µAdc
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.45
4.0
2.0
Vdc
mV/
°C
Static Drain−to−Source On−Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc)
RDS(on)
0.17
0.22
Ohm
Drain−to−Source On−Voltage
(VGS = 5.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C)
VDS(on)
1.85
2.6
2.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
2.5
7.9
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
741
1040
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
175
250
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
18.9
40
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
11
20
ns
Rise Time
(VDD = 50 Vdc, ID = 10 Adc,
VGS =50Vdc
tr
74
150
Turn−Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 Ω)
td(off)
17
30
Fall Time
RG 9.1 Ω)
tf
38
80
Gate Charge
(S
Fi
8)
QT
9.3
15
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 10 Adc,
Q1
2.56
(VDS
80 Vdc, ID
10 Adc,
VGS = 5.0 Vdc)
Q2
4.4
Q3
4.66
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.98
0.898
1.6
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
124.7
ns
(See Figure 14)
(IS = 10 Adc, VGS = 0 Vdc,
ta
86
(IS
10 Adc, VGS
0 Vdc,
dIS/dt = 100 A/µs)
tb
38.7
Reverse Recovery Stored Charge
QRR
0.539
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.


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