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MBRF880 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MBRF880 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 1 2 PIN 10.2± 0.2 4.0± 0.3 5.0± 0.1 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 2.6± 0.2 0.6± 0.1 FEATURES MECHANICAL DATA Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard total device11111111 m rectified current @T C = 125°C IF(AV) A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM A Maximum forw ard (I voltage (IF=8.0A,TC=25 ) (Note 1) (IF=16A,TC=25 ) F=8.0A ,TC=125 ) Maximum reverse current @T C=25 at rated DC blocking voltage @T C=125 Maximum thermal resistance (Note 2) RθJC K/W Operating junction temperature range TJ Storage temperature range TSTG 2 . Thermal resistance f rom junction to case. m A 30 35 40 45 50 60 80 100 8.0 150 30 35 40 45 50 60 80 100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Metal silicon junction, m ajority carrier conduction. Case:JEDEC ITO-220AC,m olded plastic body SCHOTTKY BARRIER RECTIFIER High current capacity, low forward voltage drop. NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. - 55 ---- + 150 - 55 ---- + 150 Term inals:Solderable per MIL-STD-750, 1 1 Method 2026 IR VF 0.1 0.5 3.0 ITO-220AC MBRF830---MBRF8100 MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF 830 835 840 845 850 860 880 8100 Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Polarity: As m arked Weight:0.056 ounces,1.587 gram 15 50 V 0.57 0.70 0.84 0.70 - 0.80 0.85 0.95 - Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. Dimensions in millimeters 21 25 28 32 35 42 56 70 Diode Semiconductor Korea www.diode.kr |
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