FLASH MEMORY

11

K9F1G08U0A

K9F1G08Q0A

Program / Erase Characteristics

NOTE : 1. Max. time of

Parameter

Symbol

Min

Typ

Max

Unit

Program Time

-

300

700

µs

Dummy Busy Time for Cache Program

3

700

µs

Number of Partial Program Cycles

in the Same Page

Main Array

Nop

-

-

4

cycles

Spare Array

-

-

4

cycles

Block Erase Time

-

2

3

ms

AC Timing Characteristics for Command / Address / Data Input

NOTE : 1. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.

Parameter

Symbol

Min

Max

Unit

K9F1G08Q0A

K9F1G08U0A

K9F1G08Q0A

K9F1G08U0A

CLE setup Time

25

10

-

-

ns

CLE Hold Time

10

5

-

-

ns

CE setup Time

35

15

-

-

ns

CE Hold Time

10

5

-

-

ns

WE Pulse Width

25

15

-

-

ns

ALE setup Time

25

10

-

-

ns

ALE Hold Time

10

5

-

-

ns

Data setup Time

20

10

-

-

ns

Data Hold Time

10

5

-

-

ns

Write Cycle Time

45

30

-

-

ns

WE High Hold Time

15

10

-

-

ns

ALE to Data Loading Time

-

-

ns