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TLC374CDG4 Datasheet(PDF) 10 Page - Texas Instruments
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TLC374CDG4 Datasheet(HTML) 10 Page - Texas Instruments
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TLC374, TLC374Q, TLC374Y
QUADRUPLE DIFFERENTIAL COMPARATORS
SLCS118C – NOVEMBER 1983 – REVISED MARCH 1999
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
LinCMOS process is a linear polysilicon-gate complimentary-MOS process. Primarily designed for single-
supply applications, LinCMOS products facilitate the design of a wide range of high-performance analog
functions from operational amplifiers to complex mixed-mode converters.
While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS products. Further questions should be directed to the nearest TI field sales office.
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g. during board assembly. If a circuit in which one amplifier from a dual operational
amplifier is being used and the unused pins are left open, high voltages tends to develop. If there is no provision
for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail.
To prevent voltage buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than normal operating voltages but lower than the breakdown voltage
of the input gate. This type of protection scheme is limited by leakage currents which flow through the shunting
transistors during normal operation after an ESD voltage has occurred. Although these currents are small, on
the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as tens of
To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in
Figure 4. This circuit can withstand several successive 1-kV ESD pulses, while reducing or eliminating leakage
currents that may be drawn through the input pins. A more detailed discussion of the operation of TI’s
ESD-protection circuit is presented on the next page.
All input an output pins of LinCMOS and Advanced LinCMOS products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 1000 V discharged from a 100-pF capacitor through
Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
To Protected Circuit
Figure 4. LinCMOS ESD-Protection Schematic
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