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TLC25M4BCN Datasheet(PDF) 1 Page - Texas Instruments

Part No. TLC25M4BCN
Description  LinCMOS QUAD OPERATIONAL AMPLIFIERS
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TLC25M4BCN Datasheet(HTML) 1 Page - Texas Instruments

 
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TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS
 QUAD OPERATIONAL AMPLIFIERS
SLOS003G – JUNE 1983 – REVISED MARCH 2001
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D A-Suffix Versions Offer 5-mV VIO
D B-Suffix Versions Offer 2-mV VIO
D Wide Range of Supply Voltages
1.4 V to 16 V
D True Single-Supply Operation
D Common-Mode Input Voltage Includes the
Negative Rail
D Low Noise . . . 25 nV/√Hz Typ at f = 1 kHz
(High-Bias Version)
description
The TLC254, TLC254A, TLC254B, TLC25L4,
TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A
and TL25M4B are low-cost, low-power quad
operational amplifiers designed to operate with
single or dual supplies. These devices utilize the
Texas
Instruments
silicon
gate
LinCMOS
process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV
maximum, very high input impedances, and extremely low input offset and bias currents. Because the input
common-mode range extends to the negative rail and the power consumption is extremely low, this series is
ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a
1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in degradation of the device parametric performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for these
devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit
using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of
these devices. Many features associated with bipolar technology are available with LinCMOS operational
amplifiers without the power penalties of traditional bipolar devices.
Available options
VIOmax
PACKAGED DEVICES
CHIP FORM
TA
VIOmax
AT 25
°C
SMALL OUTLINE
(D)
PLASTIC DIP
(N)
TSSOP
(PW)
CHIP FORM
(Y)
10 mV
TLC254CD
TLC254CN
TLC254CPW
TLC254Y
5 mV
TLC254ACD
TLC254ACN
2 mV
TLC254BCD
TLC254BCN
10 mV
TLC25L4CD
TLC25L4CN
TLC25L4CPW
TLC25L4Y
0
°C to 70°C
5 mV
TLC25L4ACD
TLC25L4ACN
2 mV
TLC25L2BCD
TLC25L4BCN
10 mV
TLC25M4CD
TLC25M4CN
TLC25M4CPW
TLC25M4Y
5 mV
TLC25M4ACD
TLC25M4ACN
2 mV
TLC25M4BCD
TLC25M4BCN
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips
are tested at 25
°C.
Copyright
 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments.
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8
1OUT
1IN –
1IN +
VDD
2IN +
2IN –
2OUT
4OUT
4IN –
4IN +
VDD–/GND
3IN +
2IN –
3OUT
D, N, OR PW PACKAGE
(TOP VIEW)
symbol (each amplifier)
+
OUT
IN +
IN –


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