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FMG2G75US120 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMG2G75US120 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A Electrical Characteristics of IGBT T C = 25°C unless otherwise noted Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 3mA 1200 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC =75mA, VCE = VGE 5.0 7.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75A, VGE = 15V -- 2.6 3.0 V Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC =75A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -- 75 -- ns tr Rise Time -- 80 -- ns td(off) Turn-Off Delay Time -- 295 -- ns tf Fall Time -- 50 150 ns Eon Turn-On Switching Loss -- 6.9 -- mJ Eoff Turn-Off Switching Loss -- 4.3 -- mJ td(on) Turn-On Delay Time VCC = 600 V, IC = 75A, RG =10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 80 -- ns tr Rise Time -- 80 -- ns td(off) Turn-Off Delay Time -- 310 -- ns tf Fall Time -- 70 -- ns Eon Turn-On Switching Loss -- 8.4 -- mJ Eoff Turn-Off Switching Loss -- 5.6 -- mJ Tsc Short Circuit Withstand Time VCC = 600 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC =75A, VGE = 15V -- 570 -- nC Qge Gate-Emitter Charge -- 90 -- nC Qgc Gate-Collector Charge -- 310 -- nC Symbol Parameter Test Conditions Min. Typ. Max. Unit s VFM Diode Forward Voltage IF = 75A TC = 25°C -- 2.3 3.0 V TC = 125°C -- 2.2 -- trr Diode Reverse Recovery Time IF = 75A di / dt = 1000 A/us TC = 25°C -- 150 -- ns TC = 125°C -- 225 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 47 -- A TC = 125°C -- 61 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 3525 nC TC = 125°C -- 6863 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.28 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.34 °C/W RθJC Case-to-Sink (Conductive grease applied) 0.035 -- °C/W Weight Weight of Module 240 -- g |
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