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DN2530 Datasheet(PDF) 1 Page - Microchip Technology |
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DN2530 Datasheet(HTML) 1 Page - Microchip Technology |
1 / 13 page 2016 Microchip Technology Inc. DS20005451A-page 1 DN2530 Features • High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakage Applications • Normally-on switches • Solid state relays •Converters • Linear amplifiers • Constant current sources • Power supply circuits • Telecom Description The DN2530 is a low-threshold, depletion-mode, nor- mally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manu- facturing process. This combination produces a device with the power-handling capabilities of bipolar transis- tors, plus the high-input impedance and positive-tem- perature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal run- away and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ide- ally suited to a wide range of switching and amplifying applications where high breakdown-voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired. Package Types TO-92 See Table 2-1 for pin information TO-243AA (SOT-89) GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN N-Channel, Depletion-Mode, Vertical DMOS FET |
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