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SI4559EY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4559EY
Description  N-Channel 60-V (D-S), 175°C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4559EY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4559EY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
1
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
P-Ch
–1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
P-Ch
"100
nA
ZG
V l
D i C
I
VDS = 60 V, VGS = 0 V
N-Ch
2
A
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
P-Ch
–2
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 55_C
N-Ch
25
mA
VDS = –60 V, VGS = 0 V, TJ = 55_C
P-Ch
–25
On-State Drain Currentb
ID(on)
VDS w 5 V, VGS = 10 V
N-Ch
20
A
On-State Drain Currentb
ID(on)
VDS v –5 V, VGS = –10 V
P-Ch
–20
A
DiS
OS
R
i
b
VGS = 10 V, ID = 4.5 A
N-Ch
0.045
0.055
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –10 V, ID = –3.1 A
P-Ch
0.100
0.120
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 3.9 A
N-Ch
0.055
0.075
W
VGS = –4.5 V, ID = –2.8 A
P-Ch
0.125
0.150
Forward Transconductanceb
gfs
VDS = 15 V, ID = 4.5 A
N-Ch
13
S
Forward Transconductanceb
gfs
VDS = –15 V, ID = –3.1 A
P-Ch
7.5
S
Diode Forward Voltageb
VSD
IS = 2.0 A, VGS = 0 V
N-Ch
0.9
1.2
V
Diode Forward Voltageb
VSD
IS = –2.0 A, VGS = 0 V
P-Ch
–0.8
–1.2
V
Dynamica
Total Gate Charge
Qg
NCh
l
N-Ch
19
30
C
Total Gate Charge
Qg
N-Channel
V
30 V V
10 V I
4 5 A
P-Ch
16
25
C
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 10 V, ID = 4.5 A
N-Ch
4
nC
Gate-Source Charge
Qgs
P-Channel
VDS = –30 V, VGS = –10 V
P-Ch
4
nC
Gate-Drain Charge
Qgd
VDS = –30 V, VGS = –10 V
ID = –3.1A
N-Ch
3
Gate-Drain Charge
Qgd
P-Ch
1.6
Turn-On Delay Time
td(on)
NCh
l
N-Ch
13
20
Turn-On Delay Time
td(on)
NCh
l
P-Ch
8
15
Rise Time
tr
N-Channel
VDD = 30 V, RL = 30 W
N-Ch
11
20
Rise Time
tr
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
10
20
Turn-Off Delay Time
td(off)
P-Channel
V30 V R
30
W
N-Ch
36
60
ns
Turn-Off Delay Time
td(off)
VDD = –30 V, RL = 30 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
P-Ch
12
25
ns
Fall Time
tf
ID
1 A, VGEN
10 V, RG
6
W
N-Ch
11
20
Fall Time
tf
P-Ch
35
50
Source-Drain Reverse Recovery Time
trr
IF = 2 A, di/dt = 100 A/ms
N-Ch
35
60
Source-Drain Reverse Recovery Time
trr
IF = –2 A, di/dt = 100 A/ms
P-Ch
60
90
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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