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RL251 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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RL251 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC R-3,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method208 Polarity: Color band denotes cathode end Weight:0.021 ounces,0.58 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%. RL 253 RL 254 RL 255 RL 256 RL 257 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average f orw ard rectified current 9.5mm lead length @T A=75 Peak f orw ard surge current 8.3ms single half -sine-w ave superimpoded on ratde load @T J=125 Maximum instantaneous f orw ard voltage @ 2.5 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) R JA /W Operaring junction temperature range TJ Storage temperature range TSTG 50 R - 3 Mounting position: Any 100 70 RL 251 RL 252 50 5.0 A A -55----+150 25 RL251---RL257 A IF(AV) 2.5 PLASTIC SILICON RECTIFIERS Easily cleaned with Freon,Alcohol,Isopropanol The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.5 A 35 100 1.1 2. Thermal resistance f rom junction to ambient. 50.0 150.0 IFSM NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 30 IR Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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