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ES1 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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ES1 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES1 ES1A UNITS Maximum recurrent peak reverse voltage VRRM 400 600 V Maximum RMS voltage VRMS 280 420 V Maximum DC blocking voltage VDC 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 0.5/0.7A VF V Maximum reverse current @T A=25 5.0 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG NOTE:1. Measured with I F=0.5A, I R=1A, Irr=0.25A. VOLTAGE RANGE: 1500 --- 600 V CURRENT: 0.7 A 200 ES1Z A 0.7 DO - 41 IF(AV) The plastic material carries U/L recognition 94V-0 0.5 A IFSM 10.0 2.0 20.0 30.0 2.5 3. Thermal resistance f rom junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 -55---- +150 15 350 IR 50 100.0 ES1F---ES1A 1500 1050 1500 ES1F Easily cleaned with Freon,Alcohol,Isopropanol 200 140 FAST RECOVERY RECTIFIERS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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