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LMV344-N Datasheet(PDF) 5 Page - Texas Instruments

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Part # LMV344-N
Description  Single Rain-to-Rail Output CMOS Operation Amplifier With Shutdown
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMV344-N Datasheet(HTML) 5 Page - Texas Instruments

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LMV341-N, LMV342-N, LMV344-N
www.ti.com
SNOS990H – APRIL 2002 – REVISED JUNE 2016
Product Folder Links: LMV341-N LMV342-N LMV344-N
Submit Documentation Feedback
Copyright © 2002–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3)
Shorting output to V+ will adversely affect reliability.
(4)
Shorting output to V- will adversely affect reliability.
(5)
The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
Differential input voltage
±Supply voltage
Supply voltage (V + – V )
6
V
Output short circuit to V +
See(3)
Output short circuit to V
See(4)
Lead temperature
Infrared or convection reflow (20 s)
235
°C
Wave soldering (10 s)
260
Junction temperature, TJ
(5)
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Human Body Model, applicable std. MIL-STD-883, Method 3015.7.
(2)
Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-
C101-C (ESD FICDM std. of JEDEC).
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM)(1)
±2000
V
Machine model (MM)(2)
±200
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage
2.7
5.5
V
Temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LMV341-N
LMV342-N
LMV344-N
UNIT
DCK
(SC70)
D
(SOIC)
DGK
(VSSOP)
D
(SOIC)
PW
(TSSOP)
6 PINS
8 PINS
8 PINS
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
414
190
235
145
155
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
116.1
65.2
68.4
45.9
50.5
°C/W
RθJB
Junction-to-board thermal resistance
53.3
61.4
98.8
44.1
66.2
°C/W
ψJT
Junction-to-top characterization
parameter
8.8
16.1
9.8
10.2
6.3
°C/W
ψJB
Junction-to-board characterization
parameter
52.7
60.8
97.3
43.7
65.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal
resistance
°C/W


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