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IRG4PF50WD Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PF50WD Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-cha n ne l C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits PD- 91788 Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 0.64 RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) Thermal Resistance • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses www.irf.com 1 TO-247AC VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 900 V IC @ TC = 25°C Continuous Collector Current 51 IC @ TC = 100°C Continuous Collector Current 28 A ICM Pulsed Collector Current 204 ILM Clamped Inductive Load Current 204 IF @ TC = 100°C Diode Continuous Forward Current 16 IFM Diode Maximum Forward Current 204 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 200 PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings W |
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