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FOD817C Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FOD817C Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 8/19/04 Page 2 of 9 © 2004 Fairchild Semiconductor Corporation 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series *Typical values at TA = 25°C. *Typical values at TA = 25°C. NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ* Max Unit EMITTER (IF = 20 mA) VF — 1.2 1.4 V Input Forward Voltage Reverse Leakage Current (VR = 4.0 V) IR —— 10 µA Terminal Capacitance (V = 0, f = 1 kHz) Ct –30 250 pF DETECTOR Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IF = 0) BVCEO 70 — — V Emitter-Collector Breakdown Voltage (IE = 10 µA, IF = 0) BVECO 6– – V Collector-Emitter Dark Current (VCE = 20 V, IF = 0) ICEO —– 100 nA TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit Current Transfer Ratio (IF = 5 mA, VCE = 5 V) (note 1) CTR FOD817 50 — 600 % FOD817A 80 — 160 % FOD817B 130 — 260 % FOD817C 200 — 400 % FOD817D 300 — 600 % Collector-Emitter Saturation Voltage (IF = 20 mA, IC = 1 mA) VCE (SAT) — 0.1 0.2 V AC Characteristic Rise Time (IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2) tr —4 18 µs Fall Time (IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2) tf —3 18 µs ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ* Max Units Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min VISO 5000 Vac(rms) Isolation Resistance (VI-O = 500 VDC) RISO 5 x 1010 1011 Ω Isolation Capacitance (VI-O = 0, f = 1 MHz) CISO 0.6 1.0 pf |
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