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FOD817 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FOD817
Description  4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FOD817 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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8/19/04
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© 2004 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
*Typical values at TA = 25°C.
*Typical values at TA = 25°C.
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
Unit
EMITTER
(IF = 20 mA)
VF
1.2
1.4
V
Input Forward Voltage
Reverse Leakage Current
(VR = 4.0 V)
IR
——
10
µA
Terminal Capacitance
(V = 0, f = 1 kHz)
Ct
–30
250
pF
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 0.1 mA, IF = 0)
BVCEO
70
V
Emitter-Collector Breakdown Voltage
(IE = 10 µA, IF = 0)
BVECO
6–
V
Collector-Emitter Dark Current
(VCE = 20 V, IF = 0)
ICEO
—–
100
nA
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
Current Transfer Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTR
FOD817
50
600
%
FOD817A
80
160
%
FOD817B
130
260
%
FOD817C
200
400
%
FOD817D
300
600
%
Collector-Emitter
Saturation Voltage
(IF = 20 mA, IC = 1 mA)
VCE (SAT)
0.1
0.2
V
AC Characteristic
Rise Time
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
tr
—4
18
µs
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
tf
—3
18
µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage (note 3)
f = 60Hz, t = 1 min
VISO
5000
Vac(rms)
Isolation Resistance
(VI-O = 500 VDC)
RISO
5 x 1010
1011
Isolation Capacitance
(VI-O = 0, f = 1 MHz)
CISO
0.6
1.0
pf


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