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MTB050P10H8-0-T6-G Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTB050P10H8-0-T6-G Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
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3 / 11 page  CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 3/11 MTB050P10H8 CYStek Product Specification Dynamic *4 Ciss - 2191 - Coss - 159 - Crss - 65 - pF VDS=-50V, VGS=0V, f=1MHz Qg *1, 2 - 40.7 - Qgs *1, 2 - 7.2 - Qgd *1, 2 - 4.0 - nC VDS=-80V, VGS=-10V, ID=-15A td(ON) *1, 2 - 13.4 - tr *1, 2 - 23.6 - td(OFF) *1, 2 - 68.6 - tf *1, 2 - 21.2 - ns VDS=-50V, ID=-15A, VGS=-10V RG=2.7Ω Rg - 4 - Ω f=1MHz Source-Drain Diode IS *1 - - -20 ISM *3 - - -80 A VSD *1 - -0.71 -1 V IS=-2A, VGS=0V trr - 28.4 - ns Qrr - 40.9 - nC IF=-15A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. |
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