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TC281-30 Datasheet(PDF) 1 Page - Texas Instruments
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TC281-30 Datasheet(HTML) 1 Page - Texas Instruments
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× 1010-PIXEL CCD IMAGE SENSOR
SOCS058D – JUNE 1996 – REVISED MARCH 2003
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Frame-Transfer Image Sensor
11.3-mm Image Area Diagonal
1000 (H) x 1000 (V) Active Elements
Up to 30 Frames per Second
8-µm Square Pixels
Low Dark Current
Advanced Lateral Overflow Drain for
Single-Pulse Image Area Clear Capability
Dynamic Range of More Than 60 dB
High Sensitivity and Quantum Efficiency
Nondestructive Charge Detection Through
Texas Instruments Advanced BCD Node
High Near-Infrared (IR) and Blue Response
Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides high-resolution image
acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis, and
metrology. The image-sensing area measures 8 mm horizontally and 8 mm vertically; the image-area diagonal
measures 11,3 mm and the sensor has 8-
µm square pixels. The image area contains 1000 active lines with 1000
active pixels per line. The dark reference signal can be obtained from ten dark reference lines located between
the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal line,
and 8 dark reference pixels located at the right edge of each horizontal line.
The storage section of the TC281 device contains 1010 lines with 1036 pixels per line. The area is protected
from exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor
can be transferred into the storage section in less than 110
µs. After the image capture is completed (integration
time) and the image is transferred into the storage, the image readout is accomplished by transferring charge,
one line at a time, into the serial register located below the storage area. The serial register contains 1036 active
pixels and 9 dummy pixels. The maximum serial-register data rate is 40 megapixels per second. If the storage
area must be cleared of all charge, charge can be transferred quickly across the serial registers into the clearing
drain located below the register.
A high performance bulk charge detection (BCD) node converts charge from each pixel into an output voltage.
A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output pin. A
readout rate of 30 frames per second is easily achievable with this device.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
2003, Texas Instruments Incorporated
All trademarks are the property of their respective owners.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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