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LMP8602-Q1 Datasheet(PDF) 5 Page - Texas Instruments

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Part # LMP8602-Q1
Description  Current-Sensing Amplifiers
Download  42 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMP8602-Q1 Datasheet(HTML) 5 Page - Texas Instruments

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LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
www.ti.com
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
Product Folder Links: LMP8601 LMP8601-Q1 LMP8602 LMP8602-Q1 LMP8603 LMP8603-Q1
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(MAX), RθJA, and the ambient
temperature, TA. The maximum allowable power dissipation PDMAX = (TJ(MAX) – TA) / RθJA or the number given in Absolute Maximum
Ratings, whichever is lower.
6.5 Thermal Information
THERMAL METRIC(1)
LMP860x,
LMP860x-Q1
LMP8602,
LMP8602-Q1,
LMP8603,
LMP8603-Q1
UNIT
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance(2)
113.1
171.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
57.3
64.1
°C/W
RθJB
Junction-to-board thermal resistance
53.5
91.1
°C/W
ψJT
Junction-to-top characterization parameter
11.1
9.4
°C/W
ψJB
Junction-to-board characterization parameter
53.0
89.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
Data sheet min and max limits are specified by test.
(2)
Typical values represent the most likely parameter norms at TA = 25°C, and at the Recommended Operation Conditions at the time of
product characterization.
(3)
Both the gain of preamplifier K1 and the gain of buffer amplifier K2 are measured individually. The overall gain of both amplifiers (AV) is
also measured to assure the gain of all parts is always within the AV limits.
(4)
Slew rate is the average of the rising and falling slew rates.
(5)
Offset voltage drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
6.6 Electrical Characteristics: VS = 3.3 V
at TA = 25°C, VS = 3.3 V, GND = 0 V, –4 V ≤ VCM ≤ 27 V, RL = ∞, OFFSET (pin 7) is grounded, and 10 nF between VS and
GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN(1)
TYP(2)
MAX(1)
UNIT
OVERALL PERFORMANCE (FROM -IN (PIN 1) AND +IN (PIN 8) TO OUT (PIN 5) WITH PINS A1 (PIN 3) AND A2 (PIN 4) CONNECTED)
IS
Supply current
1
mA
Over full temperature range
0.6
1.3
AV
Total gain
LMP8601, LMP8601-Q1
19.9
20
20.1
V/V
LMP8602, LMP8602-Q1
49.75
50
50.25
LMP8603, LMP8603-Q1
99.5
100
100.5
Gain Drift(3)
Over full temperature range
–2.7
±20
ppm/°C
SR
Slew rate(4)
VIN = ±0.165 V
0.4
0.7
V/
μs
BW
Bandwidth
50
60
kHz
VOS
Input offset voltage
VCM = VS / 2
0.15
±1
mV
TCVOS
Input offset voltage drift(5)
Over full temperature range
2
±10
μV/°C
en
Input-referred voltage noise
0.1 Hz - 10 Hz, 6 sigma
16.4
μVP-P
Spectral density, 1 kHz
830
nV/
√Hz
PSRR
Power-supply rejection ratio
3.0 V
≤ VS ≤ 3.6 V,
DC, VCM = VS/2
86
dB
Over full temperature range
70
Midscale offset scaling accuracy
LMP8601,
LMP8601-Q1
±0.15%
±0.5%
Input referred
±0.413
mV
LMP8602,
LMP8602-Q1
±0.25%
±1%
Input referred
±0.33
mV
LMP8603,
LMP8603-Q1
±0.45%
±1.5%
Input referred
±0.248
mV


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