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SN65DP159 Datasheet(PDF) 9 Page - Texas Instruments |
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SN65DP159 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 63 page  9 SN65DP159, SN75DP159 www.ti.com SLLSEJ2C – JULY 2015 – REVISED JULY 2016 Product Folder Links: SN65DP159 SN75DP159 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) The typical rating is simulated at 3.3-V VCC and 1.1-V VDD and at 27°C temperature unless otherwise noted (2) The maximum rating is simulated at 3.6-V VCC and 1.27-V VDD and at 85°C temperature unless otherwise noted 7.5 Power Supply Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(1) MAX(2) UNIT PD1 Device power dissipation (Retimer operation) OE = H, VCC = 3.3 V/3.6 V, VDD = 1.1 V/1.27 V IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern, VI = 3.3 V, I2C_EN/PIN = L, PRE_SEL= H, EQ_CTL= H, SDA_CTL/CLK_CTL = 0 V, VSadj = 7.06 kΩ 435 600 mW PD2 Device power dissipation (Redriver operation) OE = H, VCC = 3.3 V/3.6 V, VDD = 1.1 V/1.27 V IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern, VI = 3.3 V, I2C_EN/PIN = L, PRE_SEL= H, EQ_CTL= H, SDA_CTL/CLK_CTL = 0 V, VSadj = 7.06 kΩ 215 400 mW PSD1 Device power in power down OE = L, VCC = 3.3 V/3.6 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ 10 30 mW ICC1 VCC supply current (TMDS 6Gpbs retimer mode) OE = H, VCC= 3.3 V/3.6 V, VDD = 1.1V/1.27 V, VSadj = 7.06 kΩ IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H 35 50 mA IDD1 VDD supply current (TMDS 6Gpbs retimer mode) OE = H, VCC = 3.3 V/3.6 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H 295 325 mA ICC2 VCC supply current (TMDS 6Gpbs redriver mode) OE = H, VCC = 3.3 V/3.465 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H 8 20 mA IDD2 VDD supply current (TMDS 6Gpbs redriver mode) OE = H, VCC = 3.3 V/3.465 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H 170 250 mA ISD1 Power-down current OE = L, VCC = 3.3 V/3.465 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ 3.3-V rail 2 5 mA ISD1 Power-down current OE = L, VCC = 3.3 V/3.465 V, VDD = 1.1 V/1.27 V, VSadj = 7.06 kΩ 1.1-V rail 3.5 10 |
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