B

-

+

A

-

+

7

OUTPUT B

8

V

+

6

INVERTING INPUT B

5

NON-INVERTING

INPUT B

NON-INVERTING

INPUT A

3

V

-

4

INVERTING INPUT A

2

OUTPUT A

1

LME49880

SNAS455C – DECEMBER 2009 – REVISED APRIL 2013

www.ti.com

CONNECTION DIAGRAM

Figure 3. Connection Diagram

See Package Number — DDA0008B

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

36V

Storage Temperature

−65°C to 150°C

Input Voltage

(V-) - 0.3V to (V+) + 0.3V

Continuous

Power Dissipation

Internally Limited

2000V

200V

1000V

Junction Temperature

150°C

Thermal Resistance

55°C/W

Solder Information

Infrared or Convection (20 sec)

260°C

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All

voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Amplifier output connected to GND, any number of amplifiers within a package.

(4)

Human body model, applicable std. JESD22-A114C.

(5)

Machine model, applicable std. JESD22-A115-A.

(6)

Charge device model, applicable std JESD22-C101-A.

2

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