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LMC6061 Datasheet(PDF) 1 Page - Texas Instruments

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Part No. LMC6061
Description  PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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LMC6061 Datasheet(HTML) 1 Page - Texas Instruments

 
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LMC6061
www.ti.com
SNOS648D – NOVEMBER 1994 – REVISED MARCH 2013
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
Check for Samples: LMC6061
1
FEATURES
DESCRIPTION
The LMC6061 is a precision single low offset voltage,
2
(Typical Unless Otherwise Noted)
micropower
operational
amplifier,
capable
of
Low Offset Voltage: 100 µV
precision
single
supply
operation.
Performance
Ultra Low Supply Current: 20
μA
characteristics include ultra low input bias current,
high voltage gain, rail-to-rail output swing, and an
Operates From 4.5V to 15V Single Supply
input common mode voltage range that includes
Ultra Low Input Bias Current: 10 fA
ground.
These
features,
plus
its
low
power
Output Swing Within 10 mV of Supply Rail,
consumption, make the LMC6061 ideally suited for
100k Load
battery powered applications.
Input Common-mode Range Includes V
Other
applications
using
the
LMC6061
include
High Voltage Gain: 140 dB
precision full-wave rectifiers, integrators, references,
sample-and-hold circuits, and true instrumentation
Improved Latchup Immunity
amplifiers.
APPLICATIONS
This device is built with TI's advanced double-Poly
Silicon-Gate CMOS process.
Instrumentation Amplifier
For designs that require higher speed, see the
Photodiode and Infrared Detector Preamplifier
LMC6081 precision single operational amplifier.
Transducer Amplifiers
For a dual or quad operational amplifier with similar
Hand-held Analytic Instruments
features, see the LMC6062 or LMC6064 respectively.
Medical Instrumentation
PATENT PENDING
D/A Converter
Charge Amplifier for Piezoelectric Transducers
Connection Diagrams
Figure 1. 8-Pin PDIP/SOIC
Figure 2. Distribution of LMC6061 Input Offset
Voltage (TA = +25°C)
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1994–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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